Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers
Identifieur interne : 001754 ( Main/Repository ); précédent : 001753; suivant : 001755Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers
Auteurs : RBID : Pascal:12-0298693Descripteurs français
- Pascal (Inist)
- Optimisation, Epitaxie jet moléculaire, Mécanisme croissance, Rayonnement IR moyen, Laser cascade quantique, Laser semiconducteur, Electroluminescence, Sous bande, Matériau laser, Couche active, Semiconducteur bande interdite large, Substrat indium phosphure, Substrat InP, 4255, 8115H, 4270H, Application technologique.
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Abstract
Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn0.24Cd0.26Mg0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers</title><author><name sortKey="Moug, R T" uniqKey="Moug R">R. T. Moug</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author><author><name sortKey="Sultana, H" uniqKey="Sultana H">H. Sultana</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author><author><name sortKey="Yao, Y" uniqKey="Yao Y">Y. Yao</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Alfaro Martinez, A" uniqKey="Alfaro Martinez A">A. Alfaro-Martinez</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author><author><name sortKey="Peng, L" uniqKey="Peng L">L. Peng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author><author><name sortKey="Garcia, T" uniqKey="Garcia T">T. Garcia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author><author><name sortKey="Shen, A" uniqKey="Shen A">A. Shen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author><author><name sortKey="Gmachl, C" uniqKey="Gmachl C">C. Gmachl</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Tamargo, M C" uniqKey="Tamargo M">M. C. Tamargo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City College of New York</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0298693</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0298693 INIST</idno><idno type="RBID">Pascal:12-0298693</idno><idno type="wicri:Area/Main/Corpus">001A95</idno><idno type="wicri:Area/Main/Repository">001754</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Electroluminescence</term><term>Growth mechanism</term><term>Laser materials</term><term>Mid infrared radiation</term><term>Molecular beam epitaxy</term><term>Optimization</term><term>Quantum cascade laser</term><term>Semiconductor lasers</term><term>Subband</term><term>Technological application</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Optimisation</term><term>Epitaxie jet moléculaire</term><term>Mécanisme croissance</term><term>Rayonnement IR moyen</term><term>Laser cascade quantique</term><term>Laser semiconducteur</term><term>Electroluminescence</term><term>Sous bande</term><term>Matériau laser</term><term>Couche active</term><term>Semiconducteur bande interdite large</term><term>Substrat indium phosphure</term><term>Substrat InP</term><term>4255</term><term>8115H</term><term>4270H</term><term>Application technologique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn<sub>0.24</sub>Cd<sub>0.26</sub>Mg<sub>0.5</sub>Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>2011 Electronic Materials Conference</s1></fA09><fA11 i1="01" i2="1"><s1>MOUG (R. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>SULTANA (H.)</s1></fA11><fA11 i1="03" i2="1"><s1>YAO (Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>ALFARO-MARTINEZ (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>PENG (L.)</s1></fA11><fA11 i1="06" i2="1"><s1>GARCIA (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHEN (A.)</s1></fA11><fA11 i1="08" i2="1"><s1>GMACHL (C.)</s1></fA11><fA11 i1="09" i2="1"><s1>TAMARGO (M. C.)</s1></fA11><fA12 i1="01" i2="1"><s1>CALDWELL (Joshua)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GOLDMAN (Rachel)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>HALL (Doug)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>JURCHESCU (Oana)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>MORAN (Pete)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>XING (Grace)</s1><s9>ed.</s9></fA12><fA12 i1="07" i2="1"><s1>CHEN YANG</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>City College of New York</s1><s2>New York, NY 10031</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>TMS - The Minerals, Metals & Materials Society</s1><s3>INC</s3><s9>org-cong.</s9></fA18><fA20><s1>944-947</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000505293210230</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0298693</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn<sub>0.24</sub>Cd<sub>0.26</sub>Mg<sub>0.5</sub>Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55</s0></fC02><fC02 i1="03" i2="3"><s0>001B40B70H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Optimisation</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optimization</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Rayonnement IR moyen</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Mid infrared radiation</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Radiación infrarroja media</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser cascade quantique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum cascade laser</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Electroluminescence</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electroluminescence</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Sous bande</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Subband</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Subbanda</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Matériau laser</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Laser materials</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Couche active</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Active layer</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Capa activa</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Substrat indium phosphure</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Substrat InP</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>4255</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>4270H</s0><s4>INC</s4><s5>74</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Application technologique</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Technological application</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="17" i2="3" l="SPA"><s0>Aplicatión tecnológica</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>226</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Electronic Materials Conference</s1><s2>53</s2><s3>Santa Barbara, California USA</s3><s4>2011-06-22</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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